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Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters

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3 Author(s)
Heller, E.R. ; Mater. Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA ; Vetury, R. ; Green, D.S.

We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 4 )