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We report for the first time on graphene transistors that incorporate a remote plasma-assisted atomic-layer-deposited Al2O3 gate dielectric that is directly deposited to chemical-vapor-deposited monolayer graphene at 100°C. Following dielectric formation, atomic force microscopy and Raman measurements show apparently uniform conformal coverage and retention of a nearly intact film with a slightly increased level of disorder and some signs of additional doping. Using this process, 3-μm gate length transistors with sub-10-nm gate insulator thickness are constructed, and electrical measurements demonstrate a drive current of 0.6 A/mm and a peak transconductance in excess of 90 mS/mm with Vgs = 0 V and Vds = 1 V, which is greatly improved over coprocessed devices with SiO2 interfacial layer with the same bias. With optimization, the plasma-assisted ALD of high-k dielectrics to graphene may potentially be useful for the design of future graphene-based technology.