Cart (Loading....) | Create Account
Close category search window

Observation of anomalous Hall effect in EuO epitaxial thin films grown by a pulse laser deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yamasaki, T. ; Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan ; Ueno, K. ; Tsukazaki, A. ; Fukumura, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have found that there is a narrow but distinct window in oxygen pressure for growing phase-pure epitaxial EuO films by a pulsed laser deposition. With finely decreasing the oxygen pressure, the electrical property is varied from insulating to metallic with an enhancement in Curie temperature from 70 to 120 K. The anomalous Hall contribution was clearly observed in Hall resistance at 5 K in the highest electron density sample. The saturated anomalous Hall conductivity (0.2 S/cm) is rather high in comparison with those of the other ferromagnetic oxides, probably due to strong spin-orbit coupling in EuO.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 8 )

Date of Publication:

Feb 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.