CMOS Fully Compatible Embedded Non-Volatile Memory System With $\hbox{TiO}_{2}\hbox{-SiO}_{2}$ Hybrid Resistive-Switching Material

We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO
₂
-SiO
₂
, in a 0.18 μm node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO
₂
based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO
₂
layer between the bottom electrode and TiO
₂
film to enhance the Schottky barrier height, while maintaining TiO
₂
based RRAM characteristics.