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CMOS Fully Compatible Embedded Non-Volatile Memory System With \hbox {TiO}_{2}\hbox {-SiO}_{2} Hybrid Resistive-Switching Material

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3 Author(s)
Ming-Daou Lee ; Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; ChiaHua Ho ; Yeong-Der Yao

We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO2-SiO2, in a 0.18 μm node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO2 based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO2 layer between the bottom electrode and TiO2 film to enhance the Schottky barrier height, while maintaining TiO2 based RRAM characteristics.

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Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 3 )