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Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2Sb2TeB for phase-change memory ap plications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232°C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.