By Topic

Characteristics of TeGa _{2} Sb _{14} Thin Films for Phase-Change Memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yung-Ching Chu ; Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Chien-Tu Chao ; Po-Chin Chang ; Shih-Ching Chang
more authors

Thin films based on ternary Te-Ga-Sb alloys show much improvement over conventional Ge2Sb2TeB for phase-change memory ap plications in our earlier researches. Disclosed in this paper are phase-change characteristics of a Sb-enriched composition TeGa2Sb14. The crystallization temperature (Tc) determined from electrical resistivity versus temperature curve is 232°C. The activation energy of crystallization (Ec) evaluated by isothermal method is 3.66 eV. Data-retention is 143°C for 10 years attained from the extrapolation of the isothermal Arrhenius plot. The structure of the TeGa2Sb14 films analyzed using grazing-incident-angle X-ray diffraction shows amorphous at as-deposited state and one crystalline phase well fitted by R3m Sb-structure after crystallization. Phase-change memory bridge-cells based on TeGa2Sb14 film and TiN electrodes fabricated using focus-ion-beam method reveal typical characteristics of memory-switching behaviors suitable for phase-change memory.

Published in:

Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 3 )