By Topic

Deep Dry Etching Patterned Silicon Using GeSbSnOx Thermal Lithography Photoresist

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yu-Hsuan Lin ; Dept. of Chem. Eng., Nat. United Univ., Miaoli, Taiwan ; Chih-Chung Yang ; Chin-Tien Yang ; Shi-Wei Chen
more authors

An innovative chemical composition GeSbSnOx is introduced as positive-type photo-resist in sub-micro scale lithography. Unlike the conventional acrylic type photo-resist, this innovative photo-resistor can overcome the diffraction limit using the thermal mode recording and leave a small hole diameter of 350 nm on the surface under this experimental condition. The effects of the reactive ion etching parameter on the silicon etching were reported. The major etching parameters include passivated time, etching time, passivation cycles, total worked backing pressure, platen power, coil power and passivation gases applied. The etched depth increased monotonically with increasing the gas pressures and the platen powers. The most important factors to reduce the reaming effect of Si etching are found to be the ratio of passivation time to etching time and the etching gas flow rate. Both etched depth and reamed width decreased with increasing the ratio of passivation time to etching time and the linear relation was observed between the etched depth and the ratio.

Published in:

Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 3 )