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Crystallization Behavior of the AgInSbTe Film

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3 Author(s)
Shi-Wei Chen$^{1}$ Nano Science Group, Scientific Research Division,, National Synchrotron Radiation Research Center,, Hsin-Chu,, Taiwan ; Chin-Tien Yang ; Donyau Chiang

The sputtered films of Ag4 3In6.2Te30.5Sb60 nominal composition subjected to the various laser powers treatment from the initializer are analyzed. The degree of crystallization of this sputtered film is significantly dependent on the laser powers. Extended X-ray absorption fine structure (EXAFS) spectra indicate that, before initialization, the bonding distance between each element atom and the neighbor atoms maintains a fixed value roughly close to that in the crystal structure. It indicates the existence of short-range ordering in the amorphous structure of the film. The phase transformation of this alloy film can be processed just through a quite short displacement of atoms from the amorphous frame to the corresponding crystalline frame; consequently fast phase change is achieved. The discs of proper designed layer structure and initialization power treatment have excellent direct overwriting performance.

Published in:

IEEE Transactions on Magnetics  (Volume:47 ,  Issue: 3 )