IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:98 Issue:8 Help

Influence of the p-type doping concentration on reflection-mode GaN photocathode

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wang, Xiaohui ; Department of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People’s Republic of China ; Chang, Benkang ; Ren, Ling ; Gao, Pin

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3556656 

Four different p-type doping GaN photocathodes are activated by Cs/O, and the quantum efficiency (QE) curves are obtained. According to the QE equation, the curves are fitted. Both the QE curves and the fitting results show that the optimal p-type doping concentration is at 1017 cm-3. The electron diffusion length and surface-electron escape probability can be balanced well at 1017 cm-3. To a certain degree, thick emission layer is conducive to improving the QE, which is more obvious with the long wavelength.

Published in:
Applied Physics Letters  (Volume:98 ,  Issue: 8 )

Date of Publication: Feb 2011

Page(s):
082109 - 082109-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.3556656
Product Type:
Journals & Magazines
Date of Current Version :
28 February 2011
Issue Date :
Feb 2011

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.