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Influence of the p-type doping concentration on reflection-mode GaN photocathode

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4 Author(s)
Wang, Xiaohui ; Department of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People’s Republic of China ; Chang, Benkang ; Ren, Ling ; Gao, Pin

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Four different p-type doping GaN photocathodes are activated by Cs/O, and the quantum efficiency (QE) curves are obtained. According to the QE equation, the curves are fitted. Both the QE curves and the fitting results show that the optimal p-type doping concentration is at 1017 cm-3. The electron diffusion length and surface-electron escape probability can be balanced well at 1017 cm-3. To a certain degree, thick emission layer is conducive to improving the QE, which is more obvious with the long wavelength.

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Applied Physics Letters  (Volume:98 ,  Issue: 8 )