Test structure design for the evaluation of carrier-carrier scattering effect on hole and electron mobilities

In this paper we present a new three-terminal test structure that enables one to simply evaluate the reduction in the hole and electron mobilities due to the carrier-carrier scattering effect. The use of a three-terminal device is necessary to remove the limitations of other measurement methods and to separately obtain /spl mu//sub n/ and /spl mu//sub p/. An investigation of the role of the geometrical parameters of the test structure highlights its suitability and flexibility for the mobility extraction procedure. Numerical simulation is used to carefully design the test structure and to verify the accuracy of the measurement method. Experimental results obtained from n-type silicon regions are presented and compared to major analytical models.