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Influence of die attachment on MOS transistor matching

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4 Author(s)
Bastos, J. ; Katholieke Univ., Leuven, Heverlee, Belgium ; Steyaert, M.S.J. ; Pergoot, A. ; Sansen, W.M.

A test chip which allows the experimental study of the influence of die residual stresses on MOS transistor matching, in a standard 0.7 μm CMOS technology, is described. The influence of eutectic die bonding on transistor matching is found to be a major degradation factor. Polyimide bonded dies do not significantly affect the matching performance of MOS transistors

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:10 ,  Issue: 2 )

Date of Publication:

May 1997

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