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Large-Signal Analysis of a Transistor Laser

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4 Author(s)
Shirao, M. ; Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan ; SeungHun Lee ; Nishiyama, N. ; Arai, S.

Small- and large-signal analyses of transistor lasers (TLs) are demonstrated for 0.98-μm wavelength GaInAs/GaAs and 1.3-μm AlGaInAs/InP systems. The modulation bandwidth of the TL was larger than that of a laser diode due to the lower damping effect in the former. Comparisons between TLs with different numbers of quantum wells indicated that a large signal response and high modulation bandwidth could be realized simultaneously. However, in the case of large-signal analysis, the calculated eye diagrams were degraded by a resonance oscillation peak. By changing structural parameters such as the facet reflectivity and by controlling the damping effect, the resonance frequency peak was suppressed and clear eye diagrams of >;40 Gb/s were obtained.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 3 )