Skip to Main Content
A Sn-doped Ga2O3 thin film was deposited on a n+-Si substrate by metal-organic chemical vapor deposition. The Ga2O3 film was found to be amorphous-like and exhibited n-type conduction with Sn doping. Room-temperature electroluminescence was clearly observed from the Sn:Ga2O3/n+ -Si diode, including an ultraviolet (UV) emission at ~ 370 nm, a yellow emission at ~ 580 nm, and a red emission at ~ 680 nm. The UV emission is assigned to the transition from SnGa donor to the VGa acceptor, whereas the visible emissions were assigned to be related to the dangling bond defects.