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RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs

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4 Author(s)
Seongjae Cho ; Stanford Univ., Stanford, CA, USA ; Kyung Rok Kim ; Park, Byung-Gook ; In Man Kang

This paper presents a radio-frequency (RF) model and extracted model parameters for junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a 3-D device simulator. JLSNW MOSFETs are evaluated for various RF parameters such as cutoff frequency fT, gate input capacitance, distributed channel resistances, transport time delay, and capacitance by the drain-induced barrier lowering effect. Direct comparisons of high-frequency performances and extracted parameters are made with conventional silicon nanowire MOSFETs. A non-quasi-static RF model has been used, along with SPICE to simulate JLSNW MOSFETs with RF parameters extracted from 3-D-simulated Y-parameters. The results show excellent agreements with the 3-D-simulated results up to the high frequency of fT.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 5 )