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Schottky contacts on differently grown n-type ZnO single crystals

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5 Author(s)
Kolkovsky, Vl. ; Technische Universität Dresden, 01062 Dresden, Germany ; Scheffler, L. ; Hieckmann, E. ; Lavrov, E. V.
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The preparation and characterization of Schottky contacts on differently grown n-type ZnO crystals was studied. We demonstrate that depending on the crystal growth process different procedures of surface treatment should be used to achieve good Schottky contacts. A treatment in a dc-hydrogen plasma enables us to fabricate Schottky contacts on hydrothermally grown ZnO, whereas a similar treatment of the vapor phase and melt grown ZnO resulted in the reduction in the diode rectification ratio. In the later samples a treatment in H2O2 significantly improves the quality of Schottky contacts. The origin of the different behavior will be discussed.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 8 )

Date of Publication:

Feb 2011

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