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Stabilizing and activating dopants in <112> silicon nanowires by alkene adsorptions: A first-principles study

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5 Author(s)
Xu, H. ; Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China ; Yang, X. B. ; Zhang, C. ; Lu, A. J.
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The B dopant stability and doping level tunability of <112> silicon nanowires (SiNWs) with alkene adsorption are revealed based on first-principles calculations. It is found that the alkenyl chains favor the middle location of (111) facet, and the B dopants prefer to locate at (110) facet of the <112> SiNW. Interestingly, the B doping levels are activated upon an alkene adsorption which introduces an intermediate energy level. This finding sheds light on how SiNWs can achieve effective doping.

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Applied Physics Letters  (Volume:98 ,  Issue: 7 )