By Topic

Stabilizing and activating dopants in <112> silicon nanowires by alkene adsorptions: A first-principles study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Xu, H. ; Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China ; Yang, X. B. ; Zhang, C. ; Lu, A. J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The B dopant stability and doping level tunability of <112> silicon nanowires (SiNWs) with alkene adsorption are revealed based on first-principles calculations. It is found that the alkenyl chains favor the middle location of (111) facet, and the B dopants prefer to locate at (110) facet of the <112> SiNW. Interestingly, the B doping levels are activated upon an alkene adsorption which introduces an intermediate energy level. This finding sheds light on how SiNWs can achieve effective doping.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 7 )