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Integrated W-band RECTENNA (rectifying antenna) with Ge quantum dot Schottky Diode

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3 Author(s)
Hongya Xu ; Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, D-70569, Germany ; Alim Karmous ; Erich Kasper

In this paper we will present our latest research results of the integrated RECTENNA (the rectifying antenna) with a THz quantum dot Schottky Diode and an integrated silicon antenna for RF applications. Within this work a specific antenna design, an integrated single patch antenna, will be shown. A layer of Ge quantum dot (QD) was embedded in an integrated Si Schottky barrier diode. The high frequency limit 1.1THz was calculated from S-parameter measurements up to 110GHz. Both are integrated on HR-Si substrates forming a simple mm-wave power detection system. First RF measurement results of RECTENNA up to 110GHz are shown.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Date of Conference:

17-19 Jan. 2011