By Topic

High-Q SU8 based above-IC inductors for RF power devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ayad Ghannam ; CNRS; LAAS; 7 avenue Colonel Roche, F-31077 Toulouse, France ; David Bourrier ; Christophe Viallon ; Jean-Marie Boulay
more authors

This paper discusses quality factor Q enhancement of inductors integrated above very low resistivity substrates (under 0.1 Ω.cm). The impact of such resistivity on the performance and the ineffectiveness of patterned ground shields are presented. Consequently, for high Q purpose, we investigate solid ground shield, additional dielectric thickness, metallic ribbon section including its aspect ratio. Q values as high as 55 at 5 GHz for a total inductance value of 0.8 nH can be achieved with only 60 μm thick dielectric layer. A low cost process has been developed to integrate these inductors above RF power LDMOS devices using the SU8 photoresist as dielectric.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2011 IEEE 11th Topical Meeting on

Date of Conference:

17-19 Jan. 2011