By Topic

A Novel MONOS Memory With High- \kappa HfLaON as Charge-Storage Layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Liu, L. ; Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China ; Xu, J.P. ; Ji, F. ; Huang, X.D.
more authors

MIS capacitors with a high-κ HfLaON or HfLaO gate dielectric are fabricated by using a reactive sputtering method to investigate the applicability of the films as a novel charge-storage layer in a metal-oxide-nitride-oxide-silicon nonvolatile memory device. Experimental results indicate that the MIS capacitor with a HfLaON gate dielectric exhibits a large memory window, high program/erase speed, excellent endurance property, and reasonable retention. The involved mechanisms for these promising characteristics with HfLaON are thought to be in part from nitrogen incorporation leading to higher density of traps with deeper levels and, thus, higher trapping efficiency, stronger Hf-N and La-N bonds, and more stable atomic structure and HfLaON-SiO2 interface, as compared to the HfLaO dielectric.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:11 ,  Issue: 2 )