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Moore's law has provided a metronome for semiconductor technology over the past four decades. However, scaling of CMOS technology is facing severe problems beyond 22nm regime. How should the semiconductor industry provide new value in each generation of products in such a scenario? The scaling roadmap for integrated circuits can be extrapolated from the current Moore's law regime into three main domains, namely 1) More Moore, 2) Beyond CMOS and 3) More than Moore. The "More Moore" domain is expected to deal with traditional Silicon CMOS and its scalability. The "Beyond CMOS" domain consists of various nanotechnologies beyond ultimately scaled CMOS (e.g., Carbon Nanotubes, Si nanowire, spintronics, etc.), which can potentially replace Silicon and CMOS in the future. The "More than Moore" domain encompasses various disruptive device paradigms such as flexible electronics, NEMs, bio-chips, hetero-junction devices, solar-cells, fuel-cells, etc. In this talk I will briefly consider the prospects of different scaled technologies and provide a more detailed view on using "spin" as a state variable for computation and storage, fundamental issues and its potential advantages over charge based electronics.