By Topic

A novel 3-D integrated HFET/RTD frequency multiplier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Auer, U. ; Dept. of Solid State Electron., Gerhard-Mercator-Univ., Duisburg, Germany ; Prost, W. ; Janssen, G. ; Agethen, M.
more authors

A merged heterostructure field-effect transistor/resonant tunneling diode (HFET/RTD) combination is proposed to act as a (sub)millimeter wave source via highly efficient frequency multiplication and its functionality is demonstrated at intermediate frequency. On a semi-insulating InP-substrate a HFET followed by a double barrier RTD-layer sequence is grown in a single molecular beam epitaxy (MBE)-run. A novel monolithic frequency multiplier circuitry is developed where the RTD is used as load in contrast to other concepts where the RTD is inserted in the input of a three-terminal device. The resulting output voltage is rectangular type and rich in higher odd harmonics. This approach avoids classical disadvantages of the RTD because biasing in the negative-differential-regime is not required and bistability of the I-V-characteristic is used rather than the negative differential resistance. The small signal parameters of the single devices realized with optical lithography, wet etching, and self-aligned process technology are used as input data for a microwave design software (MDS) and the frequency multiplication is modeled up to submillimeter wave frequencies

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:2 ,  Issue: 3 )