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Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes

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14 Author(s)
Dong-Il Moon ; Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Korea ; Sung-Jin Choi ; Chung-Jin Kim ; Jee-Yeon Kim
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A gate length of 25 nm and a silicon nanowire (SiNW) with a width of 6 nm and a height of 10 nm fully surrounded by a gate are demonstrated. A suspended SiNW, which is fully depleted, is fabricated on a bulk substrate by employing the deep reactive-ion etching process known as the Bosch process. The electrical characteristics and short-channel effects (SCEs) of the SiNW MOSFETs with all-around gates are presented. The fabricated devices show excellent immunity against SCEs despite their being built on a bulk substrate and having gate lengths scaled down to the 25-nm regime. Improved electrostatic characteristics that suppress the SCEs are shown when the dimension of the SiNW is reduced.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 4 )