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Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing

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3 Author(s)
Chen, W.B. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Shie, B.S. ; Chin, Albert

By applying laser annealing (LA) on both gate dielectrics and source/drain activation, the TaN/ZrO2/La2O3/SiO2 on Ge n-MOSFETs shows a high gate capacitance density, a small n+/p-junction ideality factor of 1.10, a small subthreshold swing (SS) of 106 mV/dec, and a good high-field mobility of 285 or 340 cm2/V·s after gate leakage correction at 1 MV/cm, at a small 0.95-nm equivalent oxide thickness (EOT). To the best of our knowledge, this is the first demonstration of significantly high gate capacitance in MOSFETs by LA. This is also the highest 1-MV/cm mobility at the smallest EOT of Ge n-MOSFETs and better than the SiO2/Si universal mobility.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 4 )

Date of Publication:

April 2011

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