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A 63 GHz low-noise active balun with broadband phase-correction technique in 90 nm CMOS

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4 Author(s)
Hsi-Han Chiang ; Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan ; Fu-Chien Huang ; Chao-Shiun Wang ; Chorng-Kuang Wang

This paper presents a low-noise active balun with broadband phase-correction. The proposed phase-correction structure is independent of operation frequency, and effectively suppresses phase deviation of active balun at millimeter-wave (MMW) band. Within the low noise current-reuse pre-amplifier, this active balun circuit can be employed as low-noise amplifier as well. This circuit is fabricated in 90nm low power CMOS technology with core area of 0.275 mm2. The measured phase error is less than 10 degrees from 50 GHz to 67 GHz, which demonstrates the robust calibration of phase error at MMW frequency. The measured voltage gain and noise figure at 63 GHz are 17.6 dB and 8.6 dB, respectively. The measured IIP3 is around -7 dBm. The core power consumption is 19 mW from 1.4 V supply voltage.

Published in:

Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian

Date of Conference:

8-10 Nov. 2010