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A novel match-line selective charging scheme for high-speed, low-power and noise-tolerant content-addressable memory

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3 Author(s)
M. M. Hasan ; Department of Electrical Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia ; A. B. M. H. Rashid ; M. M. Hussain

Content-addressable memory (CAM) is an essential component for high-speed lookup intensive applications. This paper presents a match-line selective charging technique to increase speed and reduce the energy per bit per search while increasing the noise-tolerance. Simulation in TSMC 0.18 μm technology with 64×72 Ternary CAM shows the match-line energy reduction of 45% compared to the conventional current-saving scheme with the reduction of minimum cycle time by 68% and the improvement of noise-tolerance by 96%.

Published in:

Intelligent and Advanced Systems (ICIAS), 2010 International Conference on

Date of Conference:

15-17 June 2010