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Modeling Inter-Device Leakage in 90 nm Bulk CMOS Devices

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4 Author(s)
Esqueda, I.S. ; Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA ; Barnaby, H.J. ; Holbert, K.E. ; Boulghassoul, Y.

We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the Id -Vgs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET Id -Vgs characteristics allowing the incorporation of TID into surface potential based compact models.

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Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 3 )