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Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors

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5 Author(s)
Esqueda, I.S. ; Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA ; Barnaby, H.J. ; Holbert, K.E. ; El-Mamouni, F.
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The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). The incorporation of total ionizing dose (TID) effects into a physics-based surface-potential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit simulators, e.g., SPICE. A set of extracted parameters are used in conjunction with closed-form expressions for the surface potential, thereby enabling accurate modeling of the radiation-response and its dependence on W . Total ionizing dose (TID) experiments and two-dimensional (2D) TCAD simulations are used to validate the compact modeling approach presented in this paper.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 2 )

Date of Publication:

April 2011

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