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The different hot-carrier degradation mechanisms of the lateral insulated-gate bipolar transistor on a silicon-on-insulator substrate (SOI-LIGBT) for different stress conditions have been experimentally investigated for the first time. For low Vgs and high Vds, the hot hole injects and traps into the accumulation and the field oxide, particularly the bird's beak, which results in the decrease in the on-resistance Ron at the early stress stage. It is interesting that the decrease level of Ron in SOI-LIGBT is much more serious than that in the SOI laterally diffused metal-oxide-semiconductor with the same structure fully except for the doping type in the drain area. In addition, the buried oxide surface under the drain area also suffers from severe hot-carrier degradation. However, for high Vgs and low Vds, only hot-electron injection into the gate oxide near the source side can be observed; there is no hot-carrier degradation to be found in both the field and buried oxides.