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1.14 /spl mu/m strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition

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6 Author(s)
A. M. Jones ; Mater. Res. Lab., Illinois Univ., Urbana, IL, USA ; J. F. Kluender ; S. D. Roh ; A. H. Moore
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In this talk, we present the design and device results of strained-layer InGaAs-GaAs-InGaP separate confinement heterostructure lasers emitting at 1.14 /spl mu/m fabricated on a ternary In/sub 0.03/Ga/sub 0.97/As substrate. The InGaAs substrate used for the devices in this talk was measured by FTIR spectroscopy to have an indium molar percent of 3.03%.

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE  (Volume:2 )

Date of Conference:

18-21 Nov. 1996