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Transient thermal analysis of lnGaN/GaN laser diodes

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4 Author(s)
Kudsieh, N. ; Dept. of Phys. & Opt. Sci., Univ. of North Carolina at Charlotte, Charlotte, NC, USA ; Khizar, M. ; Shah, A. ; Yasin Akhtar Raja, M.

We have investigated the transient thermal behavior and heat distribution in a multi-quantum wells (MQWs) InGaN/GaN lasers diode for λ~445 nm based on GaN substrate. 2D thermal modeling was performed to estimate the dissipation of heat from the active region. Different thermal designs for planner and solder ball bumps packages have been studied using Al2O3, ceramic-AlN and SiC as submount materials. Comparative study of the planner to that of the solder ball bumps using thermal interfacial materials of Au metallization, AuSn solder, diamond heat spreader and Al block as heat sink. We found that planner package design using SiC as submount can be a material of choice. Furthermore, LIV characteristics show as much as 2 fold enhancement in the output power of the optimized design when operated at elevated injected current ~1000 mA.

Published in:

High-Capacity Optical Networks and Enabling Technologies (HONET), 2010

Date of Conference:

19-21 Dec. 2010