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A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation

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1 Author(s)
E. Sano ; NTT LSI, Atsugi, Japan

Poisson's equation, current-continuity equations, and a rate equation for charged traps are numerically solved in two dimensions, to explain the behavior of photogenerated carriers and electric fields in GaAs metal-semiconductor-metal photoconductors (MSM PDs). An analytical model is proposed on the basis of these solutions and implemented in a SPICE-like circuit simulator. Simulated transient responses for an MSM PD and a monolithic optoelectronic receiver, consisting of an MSM PD and a MESFET transimpedance amplifier, are in good agreement with measured results

Published in:

IEEE Transactions on Electron Devices  (Volume:37 ,  Issue: 9 )