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The competition between two group V atoms is significant in epitaxy growth and it is attributable to the higher difference of incorporation rates and the characteristics of atoms themselves. It could result such that atoms join into the lattice with difficulty, which could promote desorption of extra atoms that have escaped from among incident molecules. The authors have developed a combination for the precursor state and the associated thermodynamic model in order to describe the competition between Sb and As atoms during the pseudomorphic growth of GaAsSb/GaAs multiple-quantum wells on GaAs (100) substrates by gas-source molecular-beam epitaxy. The strain-induced incorporation coefficient due to lattice mismatch between the growing film and the substrate is also taken into account. The calculated results for the model are in good agreement with the experimental data at different substrate temperatures.