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on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained  \hbox {Si}_{0.5}\hbox {Ge}_{0.5} Quantum-Well pMOSFET Along  \langle \hbox {110} \rangle and \langle \hbox {100} \rangle Channel Directions

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9 Author(s)
Se-Hoon Lee ; Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA ; Nainani, A. ; Jungwoo Oh ; Kanghoon Jeon
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pMOSFET performance of high Ge content (~50%) biaxial compressive strained SiGe heterostructure channel pMOSFETs is characterized, and performance between 〈110 〉 and 〈100 〉 channel orientations on a (001) substrate is compared for physical channel lengths down to ~80 nm. Temperature-dependent mobility and velocity are characterized for both channel directions. First, it is shown that high Ge content SiGe-based channels can deliver drive current enhancement over unstrained Si below sub-100-nm channel lengths. Second, it is found that, with a higher Ge content SiGe channel under biaxial compressive strain, there is a difference of drive current between 〈110 〉 and 〈100 〉 channel directions, and the difference increases when temperature is lowered and/or when channel length is scaled down. An external series resistance difference is detected between two channel directions, although it appears to be insufficient to explain all the direction-dependent drive current difference. Channel transport behavior in different channel orientations can be clearly observed with low external source/drain (S/D) series resistance achieved with a millisecond S/D dopant activation anneal process while controlling the thermal budget. Two possibilities have been investigated to understand channel-direction-dependent performance: possible differences in effects of device processing impact between two channel directions and anisotropic transport effects from an anisotropic hole band structure, particularly under biaxial compressive strain in a SiGe channel pseudomorphically grown on a Si substrate.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 4 )