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Phase change materials and random access memory

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5 Author(s)
Song, Zhitang ; Lab. of Nanotechnol., Chinese Acad. of Sci., Shanghai, China ; Rao, Feng ; Yun Ling ; Wu, Liangcai
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Shanghai institute of micro-system and information technology (SIMIT) began the research work in PCM technologies from 2003. This report will systematically introduce the recent progress of the PCM group led by Prof. Song. The main contents include: 1) the significance of R&D on PCM, 2) platform construction, 3) research on novel phase change materials like nano composite material (phase change material with dielectric material), multilayer phase change material, and buffer layers, 4) novel experimental methods on finding novel phase change materials like material library and high density PCM array fabrication using FIB platform, 5) phase change material engineer on 8-inch processing line, 6) theoretical simulation of 1R unit, driving device, circuit, and novel phase change materials, and 7) key technologies of developing PCM chips including diode process, nano electrode fabrication, Ge2Sb2Te5 (GST) hole filling and CMP, GST etch, and chip design and the latest test results.

Published in:

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Date of Conference:

15-17 Dec. 2010

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