A novel high-gain image sensor cell based on Si p-n APD in charge storage mode operation

A high-gain image sensor cell based on Si-avalanche p-n photodiodes in the charge-storage mode from below to above the breakdown voltage region without avalanche discharge during the readout time period is described. Photoelectron conversion characteristics of a proposed dual-gate avalanche photodiode (APD) image sensor cell in below-breakdown voltage operation were analyzed on the assumption that multiplication gain during storage time, which depends on APD bias, followed an empirical formula involving multiplication gain and reverse bias in DC bias condition. The above-breakdown voltage operation is also considered. Experimental results agree with results from analytical models.<
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