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The impact of device parameter variation on double gate tunneling FET and double gate MOSFET

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3 Author(s)
Lining Zhang ; Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China ; Chan, M. ; He, F.

Impacts of parameter variations on the performance of double-gate (DG) tunneling FET (TFET) and conventional DG MOSFET are investigated by TCAD simulations. The different operation mechanisms determined their sensitivities to parameter variations. Variations in channel doping concentrations, gate oxide thickness, silicon film thickness and offset of gate electrode are studied in this work. It is found that though TFET overcomes the minimum subthreshold swing (SS) limit in conventional MOSFET, it is more sensitive to parameter variation, especially to gate oxide and silicon film thickness.

Published in:

Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of

Date of Conference:

15-17 Dec. 2010