By Topic

Temperature-Dependent Remote-Coulomb-Limited Electron Mobility in \hbox {n}^{+} -Polysilicon Ultrathin Gate Oxide nMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ming-Jer Chen ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Sou-Chi Chang ; Shin-Jiun Kuang ; Chien-Chih Lee
more authors

Additional electron mobility due to remote scatterers in n+-polysilicon 1.65-nm gate oxide (SiO2) n-channel metal-oxide-semiconductor field-effect transistors is experimentally extracted at three different temperatures (i.e., 233, 263, and 298 K). The core of the extraction process consists of simulated temperature-dependent universal mobility curves and Matthiessen's rule in a mobility universality region. Resulting additional mobility for the first time experimentally exhibits a negative temperature coefficient, confirming interface plasmons in a polysilicon depletion region to be dominant remote Coulomb scatterers. We also present corroborative evidence as quoted in the literature, including: 1) calculated temperature-dependent remote Coulomb mobility due to ionized impurity atoms in a polysilicon depletion region; 2) experimentally assessed additional mobility at room temperature; and 3) simulated remote Coulomb mobility due to interface plasmons in a polysilicon depletion region as well as its temperature coefficient. Validity of Matthiessen's rule used in this paper is verified.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 4 )