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Integrated 2.8 \mu m Laser Source in Al _{2} O _{3} :Er ^{3+} Slot Waveguide on SOI

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3 Author(s)
Pintus, P. ; Scuola Superiore Sant''Anna, Pisa, Italy ; Faralli, S. ; Pasquale, F.D.

We numerically investigate the potential of Al2O3:Er3+ active slot waveguides for realizing small-form factor lasers on silicon on insulator at 2.8 μm. Based on recent technological improvements in the reliable and low-cost fabrication of alumina doped with high Er3 + concentration and exploiting the extremely high field intensity achievable in optimized active slot waveguides, we point out the possibility of realizing silicon-compatible emitters at 2.8 μ m, optically pumped at 1480 nm with a few milliwatts threshold pump power. A strong potential impact can be envisaged for chemical sensing, biosensing and lab-on-a-chip applications.

Published in:

Lightwave Technology, Journal of  (Volume:29 ,  Issue: 8 )