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Laser control of free-carrier density in solids through field-enhanced multiphonon tunneling recombination

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4 Author(s)
Zheltikov, A. M. ; Department of Physics, International Laser Center, M.V. Lomonosov Moscow State University, Moscow 119992, Russia ; Shneider, M. N. ; Voronin, A. A. ; Miles, R. B.

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Enhancement of multiphonon tunneling recombination of free carriers in strong laser fields is shown to offer a mechanism whereby ultrafast carrier-density dynamics in a semiconductor can be controlled by properly shaped laser pulses. This regime of laser–solid interaction enables an ultrafast switching of optical and electric properties of semiconductor materials, suggesting new strategies for laser micromachining and nanomachining, optical data processing, and ultrafast plasmonics.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 3 )