Cart (Loading....) | Create Account
Close category search window
 

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Weber, J. R. ; Department of Physics, University of California, Santa Barbara, California 93106-9530, USA ; Janotti, A. ; Van de Walle, C. G.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3544310 

Al2O3 is a promising material for use as a dielectric in metal-oxide-semiconductor devices based on III-V compound semiconductors. However, the presence of deep levels and fixed charge in the Al2O3 layer is still a concern, with native defects being a possible cause of traps, leakage, and fixed charge. We report hybrid density functional calculations for vacancies, self-interstitials, and antisites in Al2O3. The energetic positions of defect levels are discussed in terms of the calculated band alignment at the interface between the oxide and relevant III-V materials. We find that oxygen vacancies are the defects most likely to introduce gap levels that may induce border traps or leakage current in a gate stack. In addition, both self-interstitials and aluminum vacancies introduce fixed charge that leads to increased carrier scattering in the channel and shifts the threshold voltage of the device.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 3 )

Date of Publication:

Feb 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.