Referenced Items are not available for this document.
Detailed performance evaluation of silicon and GaN power FETs is presented for chip-scale DC/DC converter applications. It is shown that improved GaN power FETs and silicon MOS power diodes can potentially lead to nearly 90% power conversion efficiency when switched at 5 MHz in a synchronous buck converter topology.
Published in:
Aerospace and Electronics Conference (NAECON), Proceedings of the IEEE 2010 National
Date of Conference: 14-16 July 2010
- Page(s):
- 317 - 321
- ISSN :
- 0547-3578
- Print ISBN:
- 978-1-4244-6576-7
- INSPEC Accession Number:
- 11823620
- Conference Location :
- Fairborn, OH
- Digital Object Identifier :
- 10.1109/NAECON.2010.5712970
- Product Type:
- Conference Publications
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