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Performance evaluation of silicon and gallium nitride power FETs for DC/DC power converter applications

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3 Author(s)
Krishna Shenai ; Department of Electrical Engineering and Computer Science, The University of Toledo, OH 43606, USA ; Krushal Shah ; Huili Xing

Detailed performance evaluation of silicon and GaN power FETs is presented for chip-scale DC/DC converter applications. It is shown that improved GaN power FETs and silicon MOS power diodes can potentially lead to nearly 90% power conversion efficiency when switched at 5 MHz in a synchronous buck converter topology.

Published in:

Proceedings of the IEEE 2010 National Aerospace & Electronics Conference

Date of Conference:

14-16 July 2010