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This paper demonstrates the effect of gate fringing and dopant redistribution on the width-dependence of threshold voltage of narrow channel shallow trench isolated MOSFETs Shallow trench isolated MOSFETs have been considered in the 90 nm technology node. The model takes into account the modification of the depletion charge density caused due to dopant redistribution and the enhanced depletion depth at the trench oxide sidewalls due to edge effect caused by gate fringing. The developed model has been validated by comparing the results predicted from the derived model with experimental data, simulation data and also with a similar model available in literature. It has been demonstrated that our model predicts correctly the inverse narrow width effect of nano-scale devices.