By Topic

Design of a low-power low-phase noise MEMS compatible S-band oscillator in 130 nm CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bhattacharya, A. ; Adv. Technol. Dev. Centre, IIT Kharagpur, Kharagpur, India ; Bhattacharyya, T.K.

This paper discusses the design details of a MEMS compatible low-power, low-phase noise CMOS oscillator. The VCO was designed in UMC 130 nm RFCMOS technology for a multiband system with low power dissipation of 1.17 mW and low phase noise of -117.78 dBc/Hz at 1 MHz offset from the oscillation frequency. The centre frequency of oscillation was chosen to be 2.4 GHz which is a standard for Zigbee applications.

Published in:

India Conference (INDICON), 2010 Annual IEEE

Date of Conference:

17-19 Dec. 2010