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Concurrent Hex-Band GaN Power Amplifier for Wireless Communication Systems

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3 Author(s)
Rossano Fagotti ; Department of Electronics and Telecommunications, University of Florence, Florence, Italy ; Alessandro Cidronali ; Gianfranco Manes

In this letter, we propose a novel multi-section transmission line matching technique applied to the design of a concurrent hex-band HEMT GaN power amplifier (PA). The PA has been designed for a concurrent operation at 0.9, 1.8, 2.5, 3.5, 5.2, and 5.8 GHz. Experimental results have shown minimum and maximum saturated output power levels of 33 dBm and 36.7 dBm respectively over the different frequency bands, with the power added efficiency (PAE) ranging from a minimum of 20% to a maximum of 49%. A detailed comparison between simulation and experimental results data has also been reported.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:21 ,  Issue: 2 )