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Low dislocation density 3-inch Si doped GaAs crystals by Vertical Boat growth

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7 Author(s)
Hagi, Y. ; Semicond. Div., Sumitomo Electr. Ind. Ltd., Itami, Japan ; Kawarabayashi, S. ; Inoue, T. ; Nakai, R.
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3-inch Si doped GaAs crystals with low dislocation density (⩽100 cm-2) were developed by the Vertical Boat (VB) method. The shape of the solid/liquid interface was controlled by the temperature gradient near the interface. The desirable interface shape for low dislocation density was studied both empirically and through computer simulation. By improving the interface shape, the stable production of crystals with low dislocation density were achieved

Published in:

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Date of Conference:

29 Apr-3 May 1996