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Properties of amorphous SiC thin films prepared by plasma enhanced chemical vapour deposition

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4 Author(s)
J. Huran ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia ; A. P. Kobzev ; J. Safrankova ; I. Hotovy

The properties of hydrogenated amorphous silicon carbide films prepared by plasma enhanced chemical vapour deposition were studied by combination of infrared (IR), RBS, ERD (elastic recoil detection) measurement. IR result shoved the presence Si-C, Si-H, C-H bonds. The compositions of the silicon, carbon and hydrogen in the films were found to be dependent on the preparation conditions

Published in:

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Date of Conference:

29 Apr-3 May 1996