By Topic

Low-Dark-Current \hbox {TiO}_{2} MSM UV Photodetectors With Pt Schottky Contacts

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Huolin Huang ; Department of Physics, Xiamen University, Xiamen, China ; Yannan Xie ; Weifeng Yang ; Feng Zhang
more authors

We report on the fabrication and characterization of very low-dark-current TiO2 metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) with Pt Schottky contacts. The dark current of the PDs is merely 1.28 pA at a 5-V bias, which is much better than the previously reported data. The photoconductive gain is less than one for a bias of less than 10 V. The remarkable reduction of the dark current and the gain can be attributed to the combined effect of the large Schottky barrier height produced at the Pt/TiO2 contacts and the high quality of the sputtered TiO2 films, such as low intrinsic carrier concentration, large grain size, and absence of oxygen vacancies. The PDs also display a high quantum efficiency and a large UV-to-visible rejection ratio of about three orders of magnitude.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 4 )