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Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing

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14 Author(s)
Li, C.I. ; Adv. Technol. Dev. Div., United Microelectron. Corp., Tainan, Taiwan ; Shen, T.M. ; Kuo, P. ; Liu, R.
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In this letter, for the first time, the integration benefits of a molecular carborane (CBH-C2B10H12) implant on a state-of-the-art 28-nm logic flow are demonstrated and discussed via advanced modeling. It is shown that, by integrating CBH, pLDD formation can be optimized to provide device benefits via profile/damage engineering.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 4 )