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Two-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich \hbox {Al}_{2}\hbox {O}_{3} /p-Si Diode

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5 Author(s)
Wei Zhu ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore ; T. P. Chen ; Yang Liu ; Ming Yang
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A write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al2O3 /p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at -25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could be altered by changing the current conduction with charge trapping in the Al-rich Al2O3 layer. The memory exhibited good reading endurance and retention characteristics.

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 4 )