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Magnetocapacitance effects of Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 thin film on Si substrate

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8 Author(s)
Chen, Ying ; Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050, People’s Republic of China ; Wang, Genshui ; Zhang, Shuai ; Lei, Xiuyun
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Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 (PST/LSMO) thin film has been deposited on Si substrate by chemical solution deposition. Obvious changes in dielectric constant and loss as functions of frequency and magnetic field were observed in PST/LSMO thin film. By applying both dc bias electric and magnetic fields, apparent dielectric anomalies were observed in the “butterfly-hysteresis” curves. These effects may be useful for practical application. The mechanism for the magnetocapacitance effects in PST/LSMO is rationalized by combining the Maxwell–Wagner capacitor model and the magnetoresistivity and magnetostriction of the LSMO.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 5 )