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Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots

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7 Author(s)
Hsu, K. S. ; Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan ; Chiu, T. T. ; Lin, Wei-Hsun ; Chen, K. L.
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Microdisk lasers with active region made of type-II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. A microdisk cavity with diameter of 3.9 μm was fabricated from a 225-nm-thick GaAs layer filled with GaSb quantum dots. Lasing at wavelengths near 1000 nm at 150 K was achieved for this microdisk. A high threshold characteristic temperature of 77 K was also observed. It is found that the lasing wavelength matches closely with the first-order whispering-gallery mode of the cavity as obtained from the finite-element method simulation.

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Applied Physics Letters  (Volume:98 ,  Issue: 5 )